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BFR182T
NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz
3
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point 2) RthJS
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA

2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR182T
Maximum Ratings Parameter
Marking RGs
1=B
Pin Configuration 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SC75
Value 12 20 20 2 35 4 250 150 mW C mA Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 75C 1)
-65 ... 150 -65 ... 150
300
K/W
1
Aug-09-2001
BFR182T
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V hFE 50 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Aug-09-2001
BFR182T
Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz
1G ms 2G ma
Unit max. 0.5 dB GHz pF
typ. 8 0.33 0.18 0.6
fT Ccb Cce Ceb F
6 -
Gms -
1.2 1.9 20
-
Gma
-
13
-
|S21e|2 16 10 -
= |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2)
3
Aug-09-2001
BFR182T
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 4.8499 21.742 0.91624 2.2595 0.5641 2.8263 8.8619 22.72 6.5523 1.0132 1.7541 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 84.113 0.14414 10.004 0.039478 3.4217 2.1858 1.0378 0.43147 0 0.31068 0 0 0.64175 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.56639 8.4254 0.54818 5.9438 0.071955 1.8159 0.40796 0.34608 490.25 0.19281 0.75 1.11 300 fA fA mA -
fF ps mA V ns
V deg fF -
V fF V eV K
-
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L1 =
C4 C1 L2 B L3 C
0.762 0.706 0.382 62 84 180 7 40 48
L2 = L3 = C1
C'
B'
Transistor Chip E'
C2 C3 C4 = C5 = C6 =
C6
C2
L1
C3
C5
fF fF
E
EHA07524
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
4
Aug-09-2001
nH nH nH fF fF fF
BFR182T
Total power dissipation Ptot = f (TS )
300
mW
P tot
200
150
100
50
0 0
20
40
60
80
100
120 C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax/P totDC = f (tp)
10 3
10 2
Ptotmax / PtotDC
RthJS
10 2
10 1
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Aug-09-2001
BFR182T
Collector-base capacitance Ccb = f (VCB ) f = 1MHz
Transition frequency f T = f (I C)
V CE = Parameter
0.6
GHz pF
9
10V 8V
7 0.4 6
5V
Ccb
fT
3V
5 0.3 4 0.2 3 2 0.1 1 0 0 0 0
2V
1V 0.7V
5
10
15
V
25
5
10
15
20
mA
30
VCB
IC
Power Gain Gma , Gms = f(IC )
f = 0.9GHz VCE = Parameter
22
Power Gain Gma, Gms = f(I C)
f = 1.8GHz VCE = Parameter
15
10V 5V
dB
10V 5V 3V
dB 3V
G
16
G ma
2V
2V
9
13
1V
6
1V
10
3
7 0
4
8
12
16
20
24
mA
32
0 0
4
8
12
16
20
24
mA
32
IC
IC
6
Aug-09-2001
BFR182T
Power Gain Gma , Gms = f(VCE):_____
|S21|2 = f(VCE):--------f = Parameter
22
dB
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz
IC=10mA
0.9GHz
30
8V 5V
dBm
18 16
0.9GHz
IP 3
G
14 12 10 8 6 4 2 0 0 3 6
1.8GHz
20
3V 2V
1.8GHz
15
10
1V
5
V
12
0 0
5
10
15
20
mA
30
VCE
IC
Power Gain Gma , Gms = f(f)
VCE = Parameter
45
dB
Power Gain |S21|2= f(f)
V CE = Parameter
30
IC=10mA
dBm
IC =10mA
35 20 30
G
S21
15 10 5
25 20 15
10V 5V 1V
10 5 0 0
10V 5V 1V
0
1
2
3
4
5
GHz
7
-5 0
1
2
3
4
5
GHz
7
f
f
7
Aug-09-2001

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